Negative differential conduction in the Bloch oscillations regime in the hexagonal silicon carbide polytypes 4H, 6H and 8H

Author： Sankin V.   Stolichnov I.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.23, Iss.5, 1998-05, pp. : 999-1004

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Stepped structure of 6H silicon carbide vicinal surfaces

By  

Journal de Physique I, Vol. 4, Iss. 5, 1994-05 ,pp. : 617-622

Edp Sciences

Access to resources Recommend Favorite

Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

By  

Journal of Physics: Conference Series , Vol. 494, Iss. 1, 2014-04 ,pp. : 32-37

IOP Publishing

Access to resources Recommend Favorite

Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

By Sorokin L.   Savkina N.   Shuman V.   Lebedev A.   Mosina G.   Hutchison G.  

Technical Physics Letters, Vol. 28, Iss. 11, 2002-11 ,pp. : 935-938

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 9-13

IOP Publishing

Access to resources Recommend Favorite

Pressure dependence of dynamical and dielectric properties of 3C and 4H silicon carbide

By Karch K.   Bechstedt F.  

EPL (EUROPHYSICS LETTERS), Vol. 35, Iss. 3, 2010-03 ,pp. : 195-200

Edp Sciences

Access to resources Recommend Favorite