Chapter
Chapter 3. Transmission electron microscopy of heteroepitaxial layer structures
pp.：
36 – 45
Chapter 4. Control of MBE, MOMBE and CBE growth using RHEED
pp.：
45 – 51
Chapter 5. Soft X-ray photoelectron spectroscopy of compound semiconductor surfaces and interfaces
pp.：
51 – 59
Chapter 6. Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: depth profiling of homo- and heterostructure
pp.：
59 – 69
Chapter 7. Electrical and optical defect spectroscopy of compound semiconductors
pp.：
69 – 80
Chapter 8. Extended abstract Subpicosecond luminescence spectroscopy of heterostructures
pp.：
80 – 82
Chapter 9. Far-infrared spectroscopy of impurities in semiconductors
pp.：
82 – 90
Chapter 10. Micro-Raman spectroscopy for characterization of semiconductor devices
pp.：
90 – 96
Chapter 11. Raman spectroscopy for impurity characterization in III–V semiconductors
pp.：
96 – 104
Chapter 12. Modelling interdiffusion in epitaxial multilayer structures using X-ray simulation techniques
pp.：
104 – 109
Chapter 13. Characterization of (In,Ga) As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations
pp.：
109 – 114
Chapter 14. Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
pp.：
114 – 120
Chapter 15. A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1–xTe/CdTe on GaAs
pp.：
120 – 126
Chapter 16. Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces
pp.：
126 – 132
Chapter 17. TEM study of the origin of the surface microroughness in DSL photoetched Si-implanted GaAs wafers
pp.：
132 – 136
Chapter 18. TEM in-situ observation of recombination-enhanced mobility of dislocations in II–VI compounds
pp.：
136 – 142
Chapter 19. Investigation of surface and sub-surface defects on polished InP substrates using Auger electron spectroscopy coupled to argon ion sputtering
pp.：
142 – 148
Chapter 20. High-depth-resolution SIMS analysis for InGaAs/InP interfaces
pp.：
148 – 155
Chapter 21. Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study
pp.：
155 – 160
Chapter 22. Improved method for depth profiling of multilayer structures
pp.：
160 – 166
Chapter 23. A new, fast method for the computer simulation of CV profiles in multilayer structures
pp.：
166 – 171
Chapter 24. Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy
pp.：
171 – 176
Chapter 25. Defects in CdS:In detected by perturbed angular correlation spectroscopy (PAC)
pp.：
176 – 182
Chapter 26. Microscopical studies at cadmium impurities in compound semiconductors
pp.：
182 – 186
Chapter 27. Structural defect recovery in GaP after heavy ion implantation
pp.：
186 – 190
Chapter 28. Hydrogen depth profile measurement in a-Si1-xCx:H films by elastic recoil detection
pp.：
190 – 194
Chapter 29. Carbon analysis in CdTe by nuclear activation
pp.：
194 – 198
Chapter 30. Combined application of SEM-CL and SEM-EBIC for the investigation of compound semiconductors
pp.：
198 – 203
Chapter 31. Intensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, as observed by cathodoluminescence imaging
pp.：
203 – 208
Chapter 32. Cathodoluminescence investigations of RIE-induced defects in InP
pp.：
208 – 213
Chapter 33. Ultrahigh resolution characterisation of compound semiconductors using pulsed laser atom probe techniques
pp.：
213 – 219
Chapter 34. Inductively coupled plasma–atomic emission spectrometry (ICP-AES): an analytical technique for the chemical characterization of perovskite ceramic semiconductors
pp.：
219 – 224
Chapter 35. A study of structural properties of bulk double-doped InP by laser scattering tomography and photoetching
pp.：
224 – 229
Chapter 36. Computing errors in Fourier transform photoluminescence
pp.：
229 – 235
Chapter 37. Theoretical basis for the quantitative characterization of impurities in n-type III–V compound semiconductors by photoelectromagnetic spectroscopy
pp.：
235 – 239
Chapter 38. Characterization of si-GaAs wafer quality by room-temperature photoluminescence
pp.：
239 – 245
Chapter 39. Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers
pp.：
245 – 250
Chapter 40. Effect of substrate orientation on the defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy
pp.：
250 – 254
Chapter 41. Spatial investigation of an iron-doped indium phosphide ingot
pp.：
254 – 262
Chapter 42. Neutron transmutation doping of GaP: optical studies
pp.：
262 – 266
Chapter 43. Photoluminescence study of proton-implanted InP1-xAsx:Yb
pp.：
266 – 270
Chapter 44. Complex formation in Mn-doped GaP samples
pp.：
270 – 274
Chapter 45. Three-center Auger effect and the quantum yield of the luminescence of ZnS-based phosphors
pp.：
274 – 278
Chapter 46. Analysis of impurity distribution in n-GaAs layers by photoconductivity and cyclotron resonance measurements
pp.：
278 – 282
Chapter 47. Post-transit-time analysis of time-of-flight photocurrents
pp.：
282 – 286
Chapter 48. Time-evolution of low-temperature photoconductivity and Hall mobility in semi-insulating GaAs
pp.：
286 – 290
Chapter 49. Interstitial Mn as a new donor in GaP and GaAs: an EPR study
pp.：
290 – 294
Chapter 50. Donor–acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR
pp.：
294 – 298
Chapter 51. Investigation of reactive ion etch-induced damage in InP surfaces using a noncontact photothermal radiometric probe
pp.：
298 – 302
Chapter 52. Semiconductor electrical properties from the frequency dependence of the dielectric constant: application to n-type ZnSe heteroepitaxial thin films
pp.：
302 – 307
Chapter 53. Reactive-ion-etch damage in GaAs processing evaluated by a microwave absorption technique
pp.：
307 – 312
Chapter 54. Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements
pp.：
312 – 317
Chapter 55. Characterization of III–V compounds by quasi-elastic electronic scattering of light
pp.：
317 – 320
Chapter 56. Determination of elastic properties of Si/Ge superlattices and Si1-xGex films from surface acoustic modes by Brillouin scattering
pp.：
320 – 325
Chapter 57. Ο implantation in ZnSe: lattice distortion by Raman measurement
pp.：
325 – 329
Chapter 58. Raman characterization of passivated GaAs surfaces
pp.：
329 – 334
Chapter 59. Confined optical vibrations: a new probe for alloy disorder
pp.：
334 – 338
Chapter 60. Resonant Rayleigh scattering from excitons in CdxZn1-xTe:ZnTe quantum wells: measurement of homogeneous linewidths
pp.：
338 – 342
Chapter 61. Electro-optic sampling of surface space-charge fields on III–V compounds
pp.：
342 – 347
Chapter 62. Physical characterization of OMVPE-grown AlxGa1-xAs multi-layer films by means of non-destructive optical reflectometry
pp.：
347 – 354
Chapter 63. Picosecond transient photoreflectance measurements of ion-implanted GaAs
pp.：
354 – 358
Chapter 64. Reflectometry-aided surface layer investigation
pp.：
358 – 363
Chapter 65. Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry
pp.：
363 – 370
Chapter 66. Alloy disorder effects in III–V ternaries studied by modulation spectroscopy
pp.：
370 – 376
Chapter 67. Determination of ion beam etching damage on InP by spectroscopic ellipsometry
pp.：
376 – 381
Chapter 68. Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution
pp.：
381 – 386
Chapter 69. Two-wavelength transmission: a rapid and precise method for measuring the light absorption in semiconductors
pp.：
386 – 390
Chapter 70. Single-beam thermowave analysis of semiconductors
pp.：
390 – 394
Chapter 71. Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS Application to the effect of hydrogen in CdTe
pp.：
394 – 400
Chapter 72. Long-term stability of InP MIS devices
pp.：
400 – 407
Chapter 73. Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs
pp.：
407 – 412
Chapter 74. An investigation of photo-quenching properties of LEC GaAs by using optical and electrical techniques
pp.：
412 – 417
Chapter 75. The influence of the DX center on the capacitance of Schottky barriers in n-type AlGaAs
pp.：
417 – 422
Chapter 76. Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1-xAS
pp.：
422 – 427
Chapter 77. Carrier and mobility profile measurements in n-type ion-implanted GaAs by the differential sheet resistivity and Hall effect technique
pp.：
427 – 432
Chapter 78. Electrical properties of neutron-transmutation-doped InSe
pp.：
432 – 437
Chapter 79. Landau oscillations in single quantum wells observed by microwave detection
pp.：
437 – 441
Chapter 80. An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy
pp.：
441 – 445
Chapter 81. Characterization of alloy composition in Ga1-xAlxAs/GaAs structures: comparison of photovoltage, X-ray, SIMS and RHEED techniques
pp.：
445 – 451
Chapter 82. GaSb/GaAs heteroepitaxy characterized as a stress-free system
pp.：
451 – 457
Chapter 83. The relationship between electrical and structural characteristics of CdTe and CdMnTe layers grown on InSb
pp.：
457 – 462
Chapter 84. The molecular beam epitaxial growth of GaAs(111)/Si(111): a variable growth temperature study
pp.：
462 – 467
Chapter 85. Strain and defect densities in Si/Si1-xGex heterostructures investigated by ion scattering and X-ray diffraction
pp.：
467 – 473
Chapter 86. Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers
pp.：
473 – 479
Chapter 87. Correlated use of characterization techniques to optimize the Mg implantation annealing for self-aligned HBT's
pp.：
479 – 483
Chapter 88. Electrical characterization of argon-ion sputtered n-GaAs
pp.：
483 – 487
Chapter 89. Combined application of spreading-resistance and electron-microprobe
depth profiling on GaAs:Zn and Si:Ρ
pp.：
487 – 492
Chapter 90. Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs
pp.：
492 – 497
Chapter 91. Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots
pp.：
497 – 502
Chapter 92. Evaluation of the diffusion length of minority carriers in bulk GaAs
pp.：
502 – 507
Chapter 93. Identification of the double and single acceptor state of isolated NiGa in GaAs
pp.：
507 – 513
Chapter 94. Complete identification of the Ti-related levels in GaP
pp.：
513 – 517
Chapter 95. Electronic properties and band structure of IrSe2
pp.：
517 – 522
Chapter 96. Comparison of pyrite thin films obtained from Fe and natural pyrite powder
pp.：
522 – 527
Author index
pp.：
527 – 534
Subject index
pp.：
534 – 555
Analytical Techniques for the Characterization of Compound Semiconductors
( Volume 21 )
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