A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Boriçi M.   Watling J.R.   Wilkins R.   Yang L.   Barker J.R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 163-167

Springer Publishing Company

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yang L.   Watling J.R.   Boriçi M.   Wilkins R.C.W.   Asenov A.   Barker J.R.   Roy S.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 363-368

Springer Publishing Company

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Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Nakatsuji Hiroshi   Kamakura Yoshinari   Taniguchi Kenji  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 109-112

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“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fiori G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 123-126

Springer Publishing Company

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