Influence of activation of Si29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs

Author: Saravanan G. Sai   Bhat K. Mahadeva   Vyas H. P.   Muraleedharan K.   Pathak A. P.  

Publisher: Taylor & Francis Ltd

ISSN: 1042-0150

Source: Radiation Effects and Defects in Solids, Vol.163, Iss.9, 2008-09, pp. : 737-748

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Abstract