Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Author： Puybaret Renaud   Hankinson John   Palmer James   Bouvier Clément   Ougazzaden Abdallah   Voss Paul L   Berger Claire   de Heer Walt A  

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|15|152001-152006

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.15, 2015-04, pp. : 152001-152006

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Quantum Hall effect of self-organized graphene monolayers on the C-face of 6H-SiC

By Jabakhanji B   Consejo C   Camara N   Desrat W   Godignon P   Jouault B  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 9, 2014-03 ,pp. : 94009-94020

IOP Publishing

Access to resources Recommend Favorite

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

By  

New Journal of Physics, Vol. 12, Iss. 12, 2010-12 ,pp. : 664-677

IOP Publishing

Access to resources Recommend Favorite

Effect of additional silicon on titanium/4H-SiC contacts properties

By Yong-Ping Zhang   Zhi-Zhan Chen   Wu-Yue Lu   Jia-Hui Tan   Yue Cheng   Wang-Zhou Shi  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57303-57307

IOP Publishing

Access to resources Recommend Favorite

Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure

By  

New Journal of Physics, Vol. 14, Iss. 12, 2012-12 ,pp. : 764-780

IOP Publishing

Access to resources Recommend Favorite

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

By Hao Yuan   Xiao-Yan Tang   Yi-Men Zhang   Yu-Ming Zhang   Qing-Wen Song   Fei Yang   Hao Wu  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57102-57105

IOP Publishing

Access to resources Recommend Favorite