Description
Volume is indexed by Thomson Reuters CPCI-S (WoS).Silicon ultra-large scale integrated circuits (ULSIs) are now faced with various physical limits to further scaling. Therefore, it is very important to establish the fundamental science and technology required to produce nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) having high performance, new functionalities and larger-scale integration. The scope of this book covers: - Nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS), - Novel functional devices, materials, and nanoprocessing technologies, - Nano-bio physics and technologies for future nano devices, - Variability control technologies and Signal integrity. This makes it a very useful handbook on the subject.
The 38 selected and peer-reviews papers gathered here explore possible directions now that silicon-based semiconductors are running up against physical limits to further miniaturization. They cover nano-structure physics and nano-material science, nano-processing and nano-devices, nano-system functionality integration, and nano-device integrity for variability and fluctuation and management and integration. Among the topics are photoluminescence characteristics of ultra-thin silicon-on-insulators at low temperature, the nano-surface modification of silicon with an ultra-short pulse laser process, the microscopic structure of directly bonded silicon substrates, and analyzing threshold voltage variations in fin field e
Chapter
Functional Device Applications of Nanosilicon
Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs
KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel
Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures
Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions
First-Principles Calculations of the Dielectric Constant for the GeO2 Films
Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory
Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator
II. Nano-Processing and Nano-Devices
Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering
Resistive Memory Utilizing Ferritin Protein with Nano Particle
Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation
Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction
Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process
Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation
Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction
III. Nano-System Functionality Integration
Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures
Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application
Strained Ge and Ge1-xSnx Technology for Future CMOS Devices
Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
Structural Change during the Formation of Directly Bonded Silicon Substrates
Microscopic Structure of Directly Bonded Silicon Substrates
Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains
Si Nanodot Device Fabricated by Thermal Oxidation and their Applications
Influences of Carrier Transport on Drain-Current Variability of MOSFETs
Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers
IV. Nano-Device Integrity for Variability / Fluctuation Management and Integration
Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs
Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs
Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors
Interconnect Design Challenges in Nano CMOS Circuit
Technology Evolution for Silicon Nano-Electronics
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
