Chapter
2.11 Interatomic potentials
2.12 Universal interatomic potential
Chapter 3. Dynamics of binary elastic collisions
3.2 Classical scattering theory
3.3 Kinematics of elastic collisions
3.4 Classical two-particle scattering
3.5 Motion under a central force
3.5.1 Conservation of angular momentum
3.5.2 Energy conservation in a central force
3.5.3 Angular orbital momentum and the impact parameter
3.6 The classical scattering integral
3.7 Distance of closest approach
4.2 Angular differential scattering cross-section
4.3 Energy-transfer differential scattering cross-section
4.4 Power law potentials and the impulse approximation
4.5 Power law energy-transfer cross-section
4.6 Reduced cross-section
4.7 Hard-sphere potential
5.2 The energy-loss process
5.4 Nuclear stopping: reduced notation
5.5 ZBL nuclear stopping cross-section
5.6 ZBL universal scattering formula
5.7.1 Effective charge of moving ions
5.7.2 High-energy electronic energy loss
5.7.3 Low-energy electronic energy loss
5.7.3.1 Fermi-Teller model
5.7.3.2 The Firsov and Lindhard-Scharff models
5.7.3.3 Z1 oscillations in electronic stopping
Chapter 6. Ion range and range distribution
6.3.2 Range approximations
6.4.2 The maximum range, i?max
Chapter 7. Radiation damage and spikes
7.2 Radiation damage and displacement energy
7.3 Displacements produced by a primary knock-on
7.4.1 The Norgett, Robinson, and Torrens (NRT) model of damage energy
7.5. Ion irradiation damage
7.5.1 Displacements produced by an energetic ion 7.5.3
7.5.3 Spatial distribution of deposited energy
7.6 Damage production rate
7.7 Primary recoil spectrum
7.8 Fractional damage function
7.9 Displacement damage in polyatomic materials
7.9.2 Displacement damage
7.10 Replacement collision sequences
7.11.1 Mean free path and the displacement spike
7.11.3 Deposited energy density, 0D
7.11.4 The cascade volume and the deposited energy density
7.11.5 Deposited damage energy and materials properties
Chapter 8. Ion-solid simulations and diffusion
8.2 Monte Carlo simulations
8.2.1 An example of a Monte Carlo program, PIPER
8.2.3 Electronic energy loss
8.2.4 Calculation procedure
8.2.5 An example from TRIM
8.3 Molecular dynamic simulations
8.4 Irradiation enhanced diffusion
8.4.2 Radiation enhanced diffusion (RED)
8.5 Diffusion in thermal spikes
9.2 Sputtering of single element targets
9.2.1 Nuclear stopping cross-section
9.3 Semi-empirical formula for sputtering of single elemental targets
9.4 Sputtering yield of monoatomic solids at glancing angles
9.5 Ion implantation and the steady-state concentration
9.6 Sputtering of alloys and compounds
9.6.1 Preferential sputtering
9.6.2 Composition changes
9.6.3 Composition depth profiles
9.7 High-dose ion implantation
9.8 Concentrations of implanted species
9.8.1 Si implanted with 45 keV Pt ions
9.8.2 Pt implanted with 45 keV Si ions
9.8.3 PtSi implanted with Si
9.9 Factors that influence concentrations in high dose ion implantation
9.10 Sputtering from spikes
Chapter 10. Order-disorder and ion implantation metallurgy
10.1 Irradiation induced chemical order-disorder
10.1.1 The long-range order parameter, SLR
10.1.2 Irradiation induced disordering: point defects
10.1.3 Irradiation induced disordering: dense cascades
10.1.4 Irradiation enhanced thermal reordering
10.2 Ion implantation metallurgy: introduction
10.3 Ion implantation metallurgy and phase formation
10.3.1 Simple equilibrium binary phase diagrams: solid solutions
10.3.2 Rapid thermal quenched metal systems: metastable alloys
10.3.3 Lattice location of implanted impurity atoms
10.3.3.1 Replacement collisions: kinematic picture
10.3.3.2 Hume-Rothery rules
10.3.3.4 Impurity atom-lattice defect interactions
10.4 Ion implantation: high-dose regime
10.4.2 Surface chemistry effects
Chapter 11. Ion beam mixing
11.3 Thermodynamic effects in ion mixing
11.3.2 Influence of cohesive energy
11.3.4 Cascade parameters
11.4 Thermally assisted ion mixing
11.4.1 Liquid state diffusion
11.5 Transition temperature
Chapter 12. Phase transformations
12.2 Energetics of phase transformations and ion irradiation
12.2.2 Energy differences between amorphous and crystalline states
12.2.3 Enthalpy of the order-disorder transformation
12.3 Irradiation induced defects and damage accumulation
12.3.1 Vacancy-interstitial defects
12.3.4 Strain energy and elastic instability
12.4 Phase transformations by cascades and thermal spikes
12.4.1 Cascade recovery: driving force
12.4.2 Cascade recovery: nucleation constraints
12.4.3 Cascade recovery: kinetic constraints
12.5 Kinetics and the formation of metastable phases
12.6.2 Width of the phase field
Chapter 13. Ion beam assisted deposition
13.2 Microstructure development during the growth of metallic films
13.2.4 Zone III, Ts > 0.5Tm
13.3 Non-reactive IBAD processing: effect of ions on film growth
13.3.1 Microstructure development during IBAD
13.3.2.1 Densification: Monte Carlo calculations
13.3.2.2 Densification: molecular dynamic calculations
13.4 Reactive IBAD processing: compound synthesis
13.4.1 Reactive IBAD: processing model
13.4.2 Reactive IBAD: The Hubler-van Vechten model
Chapter 14. Applications of ion beam processing techniques
14.2 Ion implantation - advantages and limitations of the technique
14.3.1 Nitrogen implantation
14.3.2 Dual ion implantation and ion beam mixing
14.3.3 Industrial tribological applications
14.5 High-temperature oxidation
14.7 Catalysis: solid/gas, solid/liquid interface reactions
14.10 Applications and research areas of IB AD processing
14.10.1 Metastable compound formation
14.10.2 Optical and electronic coatings
14.10.2.1 Dielectric coatings
14.10.2.2 Rugate filter production
14.10.2.3 Transparent conducting films
14.10.2.4 Reflective coatings
14.10.2.5 Thermochromic VO2 coatings
14.10.2.6 Magnetic thin films
14.10.2.7 Diffusion barriers
14.10.3 Tribological coatings
14.10.3.2 Solid lubricant coatings
14.10.4 Aqueous corrosion resistant coatings
14.11 Ionized cluster beam (ICB) deposition
Chapter 15. Ion beam system features
15.2 Directed beam ion implantation
15.2.1 Ion implantation ion sources
15.2.1.1 Freeman ion source
15.2.1.2 High-temperature ion source (CHORDIS)
15.2.2 Ion beam mass analysis
15.2.3 Ion beam transport, beam scanning, target manipulation
15.2.4 Dose determination
15.2.5 Substrate temperature considerations
15.3 Plasma source ion implantation*
15.4 Ion beam assisted deposition (IBAD) system ion sources
15.4.1 Broad-beam gridded ion sources
15.4.3 Electron cyclotron resonance (ECR) source
15.5 Physical vapor deposition systems and monitors
Appendix A Crystallography
A.I Crystallography and notation
A.2 Directions and planes
A.3 Spacing between planes of the same Miller indices
Appendix B Table of the elements
Appendix C Density of states
C.I Wavelike properties of electrons
C.2 Standing waves and an electron in a box
Appendix D Derivation of the Thomas-Fermi differential equation
Appendix E Center-of-mass and laboratory scattering angles
Appendix F Miedema's semi-empirical model for the enthalpy of formation in the liquid and solid states
F.2 Concentration-dependent enthalpy of formation
F.2.1 Alloys of two transition metals
F.2.2 Alloys of two non-transition metals
F.2.3 Alloys of two polyvalent non-transition metals and gaseous elements
F.2.4 Alloys of transition metals with non-transition metals
F.3 Solutions of infinite dilution
F.4 Amorphous solid solutions
Appendix G Implantation metallurgy - study of equilibrium alloys
G. 1 Study of metallurgical phenomena
G.2 Diffusion and the composition profile
G.3 Experimental determination of diffusion coefficients
Ion-Solid Interactions
：Fundamentals and Applications
( Cambridge Solid State Science Series )
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