InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Publisher: Cambridge University Press
E-ISSN: 1759-0795|6|6|565-572
ISSN: 1759-0787
Source: International Journal of Microwave and Wireless Technologies, Vol.6, Iss.6, 2014-12, pp. : 565-572
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Abstract