InAlN/GaN HEMTs based L-band high-power packaged amplifiers

Publisher: Cambridge University Press

E-ISSN: 1759-0795|6|6|565-572

ISSN: 1759-0787

Source: International Journal of Microwave and Wireless Technologies, Vol.6, Iss.6, 2014-12, pp. : 565-572

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Abstract