MBE growth and optical properties of GaAs nanowires grown on Si(111) substrate using two-temperature steps regime

Publisher: IOP Publishing

E-ISSN: 1742-6596|643|1|21-24

ISSN: 1742-6596

Source: Journal of Physics: Conference Series , Vol.643, Iss.1, 2015-11, pp. : 21-24

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content