Micromachined silicon cantilever beams for thin-film stress measurement

By Cardinale G.F.   Howitt D.G.   Clift W.M.   McCarty K.F.   Medlin D.L.   Mirkarimi P.B.   Moody N.R.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 214-219

Elsevier

Access to resources Recommend Favorite

Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

By Foglietti V.   Mariucci L.   Fortunato G.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 196-199

Elsevier

Access to resources Recommend Favorite

Subthreshold characteristics of submicrometer polysilicon thin film transistor

By Yaung D.N.   Fang Y.K.   Huang K.C.   Wang Y.J.   Hung C.C.   Liang M.S.   Wuu S.G.  

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 271-274

Elsevier

Access to resources Recommend Favorite

Analysis of thin film stress measurement techniques

By Malhotra S.G.   Rek Z.U.   Yalisove S.M.   Bilello J.C.  

Thin Solid Films, Vol. 301, Iss. 1, 1997-06 ,pp. : 45-54

Elsevier

Access to resources Recommend Favorite

Low temperature (=< 600 o C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

By Pichon L.   Raoult F.   Mourgues K.   Kis-Sion K.   Mohammed-Brahim T.   Bonnaud O.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 133-136

Elsevier

Access to resources Recommend Favorite