Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

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Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

Elsevier

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Intense visible photoluminescence from molecular beam epitaxy porous Si 1-x Ge x grown on Si

By Unal B.   Bayliss S.C.   Phillips P.   Parker E.H.C.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 274-279

Elsevier

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Incorporation and luminescence properties of Er 2 O 3 and ErF 3 doped Si layers grown by molecular beam epitaxy

By Ni W.-X.   Joelsson K.B.   Du C.-X.   Pozina G.   Buyanova I.A.   Chena W.M.   Hansson G.V.   Monemar B.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 223-227

Elsevier

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Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices

By Lippert G.   Osten H.J.   Blum K.   Sorge R.   Schley P.   Kruger D.   Fischer G.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 21-25

Elsevier

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