Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation

Author: Emtsev V.   Emtsev V.   Oganesyan G.  

Publisher: Springer Publishing Company

ISSN: 0957-4522

Source: Journal of Materials Science: Materials in Electronics, Vol.18, Iss.7, 2007-07, pp. : 701-704

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