Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 8, 2015-08 ,pp. : 466-469

John Wiley & Sons Inc

Access to resources Recommend Favorite

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 10, Iss. 9, 2016-09 ,pp. : 682-686

John Wiley & Sons Inc

Access to resources Recommend Favorite

Behaviors of Al x Ga 1-x N (0.5=

By Gong J.R.   Huang C.W.   Tseng S.F.   Lin T.Y.   Lin K.M.   Liao W.T.   Tsai Y.L.   Shi B.H.   Wang C.L.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 73-78

Elsevier

Access to resources Recommend Favorite

Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

By Agouram S.   Zuñiga Perez J.   Muñoz-Sanjosé V.  

Applied Physics A, Vol. 88, Iss. 1, 2007-07 ,pp. : 83-87

Springer Publishing Company

Access to resources Recommend Favorite

Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation

By Wang R.P.   Muto H.   Yamada Y.   Kusumori T.  

Thin Solid Films, Vol. 411, Iss. 1, 2002-05 ,pp. : 69-75

Elsevier

Access to resources Recommend Favorite