Transmission electron microscopy studies of the microstructure of Si layers grown on GaAs(001) under an excess As or Al flux

By Carlino E.   Sorba L.   Franciosi A.   Heun S.   Muller B. H.  

Philosophical Magazine B, Vol. 80, Iss. 5, 2000-05 ,pp. : 1055-1069

Taylor & Francis Ltd

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Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

By Tanaka S.   Honda Y.   Kameshiro N.   Iwasaki R.   Sawaki N.   Tanji T.   Ichihashi M.  

Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 360-365

Elsevier

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Determination of segregation, elastic strain and thin-foil relaxation in InxGa-1-x As islands on GaAs(001) by high resolution transmission electron microscopy

By Rosenauer A.   Tillmann K.   Thust A.   Lentzen M.   Swiatek P.   Forster A.   Urban K.   Laufs W.   Gerthsen D.   Remmele T.  

Philosophical Magazine Letters, Vol. 74, Iss. 5, 1996-11 ,pp. : 309-315

Taylor & Francis Ltd

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Transmission electron microscopy observations of low-load indents in GaAs

By Lebourhis E.   Patriarche G.  

Philosophical Magazine Letters, Vol. 79, Iss. 10, 1999-10 ,pp. : 805-812

Taylor & Francis Ltd

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Transmission electron microscopy study of Si -doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

By Molina S.I.   Walther T.  

Thin Solid Films, Vol. 307, Iss. 1, 1997-10 ,pp. : 6-9

Elsevier

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