Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

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Trans Tech Publications

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In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

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John Wiley & Sons Inc

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Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC

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Stacking faults in intrinsic and N-doped 4H-SiC: true influence of the N-doping on their multiplicity

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Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

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