Investigation of thermal donors in Czochralski silicon annealed at 450 o C under high pressure of 1GPa

Author: Jin X.   Yang D.   Que D.   Misiuk A.  

Publisher: Elsevier

ISSN: 0921-4526

Source: Physica B, Vol.339, Iss.4, 2003-12, pp. : 204-207

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