Properties of preferential (Zr 0.8 ,Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering for microwave application

Author： Cheng W.X. Ding A.L. Qiu P.S. Zhang Y. He X.Y. Zheng X.S.

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 648-653

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