Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

Author: Gan Kwang-Jow  

Publisher: Springer Publishing Company

ISSN: 0925-1030

Source: Analog Integrated Circuits and Signal Processing, Vol.59, Iss.2, 2009-05, pp. : 161-167

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Abstract