By Boussairi A.   Ille P.   Lopez G.   Thomasse S.   in Discrete Mathematics

ISSN:0012-365X|277|1|29-43

Elsevier‎(2004)‎

Access to resources Favorite 7.4861984

Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy‎

By Boussairi Bouzazi Hidetoshi Suzuki Nobuaki Kijima Yoshio Ohshita and Masafumi Yamaguchi  

ISBN:INT0175920234

IntechOpen‎(2011)‎

Access to resources Favorite 1.5011106

GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application‎

By Kazuma Ikeda 2 A01 Han Xiuxun 3 A01 Bouzazi Boussairi and Yoshio Ohshita  

ISBN:INT0341851885

IntechOpen‎(2013)‎

Access to resources Favorite 1.2008884