Insulated Gate Bipolar Transistor IGBT Theory and Design

Author： Vinod Kumar Khanna  

Publisher： John Wiley & Sons Inc‎

Publication year： 2004

E-ISBN: 9780471660996

P-ISBN(Hardback):  9780471238454

Subject： TN322 transistors: The properties

Language： ENG

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Description

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.

  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Chapter

Contents

pp.：  1 – 8

Preface

pp.：  8 – 16

1 Power Device Evolution and the Advent of IGBT

pp.：  16 – 22

2 IGBT Fundamentals and Status Review

pp.：  22 – 56

3 MOS Components of IGBT

pp.：  56 – 122

4 Bipolar Components of IGBT

pp.：  122 – 176

5 Physics and Modeling of IGBT

pp.：  176 – 250

6 Latchup of Parasitic Thyristor in IGBT

pp.：  250 – 324

7 Design Considerations of IGBT Unit Cell

pp.：  324 – 370

8 IGBT Process Design and Fabrication Technology

pp.：  370 – 432

9 Power IGBT Modules

pp.：  432 – 486

10 Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies

pp.：  486 – 520

11 IGBT Circuit Applications

pp.：  520 – 566

Index

pp.：  566 – 630

About the Author

pp.：  630 – 648

LastPages

pp.：  648 – 649

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