Insulated Gate Bipolar Transistor IGBT Theory and Design

Author: Vinod Kumar Khanna  

Publisher: John Wiley & Sons Inc‎

Publication year: 2004

E-ISBN: 9780471660996

P-ISBN(Hardback):  9780471238454

Subject: TN322 transistors: The properties

Language: ENG

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Description

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.

  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Chapter

Contents

pp.:  1 – 8

Preface

pp.:  8 – 16

3 MOS Components of IGBT

pp.:  56 – 122

4 Bipolar Components of IGBT

pp.:  122 – 176

5 Physics and Modeling of IGBT

pp.:  176 – 250

6 Latchup of Parasitic Thyristor in IGBT

pp.:  250 – 324

7 Design Considerations of IGBT Unit Cell

pp.:  324 – 370

8 IGBT Process Design and Fabrication Technology

pp.:  370 – 432

9 Power IGBT Modules

pp.:  432 – 486

10 Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies

pp.:  486 – 520

11 IGBT Circuit Applications

pp.:  520 – 566

Index

pp.:  566 – 630

About the Author

pp.:  630 – 648

LastPages

pp.:  648 – 649

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