Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials ( Wiley Series in Materials for Electronic & Optoelectronic Applications )

Publication series :Wiley Series in Materials for Electronic & Optoelectronic Applications

Author: Peter Capper  

Publisher: John Wiley & Sons Inc‎

Publication year: 2007

E-ISBN: 9780470319499

P-ISBN(Hardback):  9780470852903

Subject: TN04 material

Language: ENG

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Description

Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE.

This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike.

  • Covers the most important materials within the field
  • The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment
  • Builds-on an established series known in the community
  • Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Chapter

Contents

pp.:  1 – 7

Series Preface

pp.:  7 – 13

Preface

pp.:  13 – 15

Acknowledgements

pp.:  15 – 21

List of Contributors

pp.:  21 – 23

3 Phase Diagrams and Modeling in Liquid Phase Epitaxy

pp.:  45 – 69

4 Equipment and Instrumentation for Liquid Phase Epitaxy

pp.:  69 – 109

5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy

pp.:  109 – 133

6 Liquid Phase Epitaxy of Silicon Carbide

pp.:  133 – 203

7 Liquid Phase Epitaxy of Gallium Nitride

pp.:  203 – 227

8 Liquid Phase Epitaxy of Quantum Wells and Quantum Dots

pp.:  227 – 251

9 Liquid Phase Epitaxy of Hg1–xCdxTe (MCT)

pp.:  251 – 283

10 Liquid Phase Epitaxy of Widegap II-VIs

pp.:  283 – 313

11 Liquid Phase Epitaxy of Garnets

pp.:  313 – 329

12 Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications

pp.:  329 – 365

13 Liquid Phase Epitaxy for Light Emitting Diodes

pp.:  365 – 439

Index

pp.:  439 – 459

LastPages

pp.:  459 – 465

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