Porous Silicon Carbide and Gallium Nitride ：Epitaxy, Catalysis, and Biotechnology Applications

Publication subTitle ：Epitaxy, Catalysis, and Biotechnology Applications

Author： Dr Randall M. Feenstra  

Publisher： John Wiley & Sons Inc‎

Publication year： 2008

E-ISBN: 9780470751824

P-ISBN(Hardback):  9780470517529

Subject： TN304.2 compound semiconductor

Language： ENG

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Description

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Chapter

Contents

pp.：  1 – 7

Preface

pp.：  7 – 13

1 Porous SiC Preparation, Characterization and Morphology

pp.：  13 – 17

2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation

pp.：  17 – 47

3 Growth of SiC on Porous SiC Buffer Layers

pp.：  47 – 71

4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching

pp.：  71 – 93

5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy

pp.：  93 – 117

6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC

pp.：  117 – 137

7 HVPE Growth of GaN on Porous SiC Substrates

pp.：  137 – 187

8 Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers

pp.：  187 – 229

9 Electrical Properties of Porous SiC

pp.：  229 – 247

10 Magnetism of Doped GaN Nanostructures

pp.：  247 – 261

11 SiC Catalysis Technology

pp.：  261 – 291

12 Nanoporous SiC as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations

pp.：  291 – 307

Index

pp.：  307 – 327

Color_Plate

pp.：  327 – 335

LastPages

pp.：  335 – 340

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