Transmission Electron Microscopy in Micro-nanoelectronics

Author: Alain Claverie  

Publisher: John Wiley & Sons Inc‎

Publication year: 2013

E-ISBN: 9781118579039

P-ISBN(Hardback):  9781848213678

Subject: TN27 display technology

Language: ENG

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Description

Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs.
This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face to develop or optimize semiconductor layers and devices. Several of these techniques are based on electron holography; others take advantage of the possibility of focusing intense beams within nanoprobes. Strain measurements and mappings, dopant activation and segregation, interfacial reactions at the nanoscale, defect identification and specimen preparation by FIB are among the topics presented in this book. After a brief presentation of the underlying theory, each technique is illustrated through examples from the lab or fab.

Chapter

Title Page

pp.:  1 – 5

Contents

pp.:  5 – 7

Introduction

pp.:  7 – 13

Chapter 3. Quantitative Strain Measurement in Advanced Devices: A Comparison Between Convergent Beam Electron Diffraction and Nanobeam Diffraction

pp.:  53 – 81

3.2 Electron diffraction technique in TEM (CBED and NBD)

pp.:  81 – 82

3.1. Introduction

pp.:  81 – 81

3.3. Experimental details

pp.:  82 – 87

3.4. Results and discussion

pp.:  87 – 88

3.5. Conclusion

pp.:  88 – 94

Chapter 4. Dark-Field Electron Holography for Strain Mapping

pp.:  94 – 97

3.6. Bibliography

pp.:  94 – 94

Chapter 5. Magnetic Mapping Using Electron Holography

pp.:  97 – 123

Chapter 6. Interdiffusion and Chemical Reaction at Interfaces by TEM/EELS

pp.:  123 – 151

Chapter 7. Characterization of Process-Induced Defects

pp.:  151 – 181

Chapter 8. In Situ Characterization Methods in Transmission Electron Microscopy

pp.:  181 – 215

Chapter 9. Specimen Preparation for Semiconductor Analysis

pp.:  215 – 235

List of Authors

pp.:  235 – 253

Index

pp.:  253 – 257

LastPages

pp.:  257 – 260

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