High-k Gate Dielectrics for CMOS Technology

Author： Gang He  

Publisher： John Wiley & Sons Inc‎

Publication year： 2012

E-ISBN: 9783527646371

P-ISBN(Hardback):  9783527330324

Subject： TN432 field - effect type

Language： ENG

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Description

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological
viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these
materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies.

Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections
with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Chapter

Contents

pp.：  7 – 17

Preface

pp.：  17 – 19

List of Contributors

pp.：  19 – 25

Color Plates

pp.：  25 – 35

Part One Scaling and Challenge of Si-based CMOS

pp.：  35 – 65

Part Two High-k Deposition and Materials Characterization

pp.：  65 – 327

Part Three Challenge in Interface Engineering and Electrode

pp.：  327 – 413

Part Four Development in non-Si-based CMOS technology

pp.：  413 – 505

Part Five High-k Application in Novel Devices

pp.：  505 – 565

Part Six Challenge and Future Directions

pp.：  565 – 591

Index

pp.：  591 – 592

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