SiGe Heterojunction Bipolar Transistors

Author: Peter Ashburn  

Publisher: John Wiley & Sons Inc‎

Publication year: 2004

E-ISBN: 9780470090732

P-ISBN(Hardback):  9780470848388

Subject: TN322 transistors: The properties

Language: ENG

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Description

SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices.

The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications.

This book features:

  • SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications
  • Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors
  • Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology.

Essential reading for practising microelectronics engineers and researchers.
Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Chapter

Contents

pp.:  9 – 15

Preface

pp.:  15 – 19

List of Symbols

pp.:  21 – 27

1 Introduction

pp.:  27 – 39

2 Basic Bipolar Transistor Theory

pp.:  39 – 53

3 Heavy Doping Effects

pp.:  53 – 71

4 Second-Order Effects

pp.:  71 – 97

5 High-frequency Performance

pp.:  97 – 119

6 Polysilicon Emitters

pp.:  119 – 147

7 Properties and Growth of Silicon-Germanium

pp.:  147 – 175

8 Silicon-Germanium Heterojunction Bipolar Transistors

pp.:  175 – 193

9 Silicon Bipolar Technology

pp.:  193 – 217

10 Silicon-Germanium Heterojunction Bipolar Technology

pp.:  217 – 237

11 Compact Models of Bipolar Transistors

pp.:  237 – 265

12 Optimization of Silicon and Silicon-Germanium Bipolar Technologies

pp.:  265 – 283

Index

pp.:  283 – 288

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