Convergent beam electron diffraction extinction distance measurements for quantitative analysis of Si 1-x Ge x

Author： Delille D. Pantel R. Vincent G. Cappellen E.V.

Publisher： Elsevier

ISSN： 0304-3991

Source： Ultramicroscopy, Vol.93, Iss.1, 2002-10, pp. : 1-9

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Observation of crystal distortions in SiGe/Si superlattice using a new application of large-angle convergent-beam electron diffraction

By Atici Y. Cherns D.

Ultramicroscopy, Vol. 58, Iss. 3, 1995-06 ,pp. : 435-440

Elsevier

Access to resources Recommend Favorite

Efficient beam-selection criteria in quantitative convergent beam electron diffraction

By Birkeland C. Holmestad R. Marthinsen K. Hoier R.

Ultramicroscopy, Vol. 66, Iss. 1, 1996-11 ,pp. : 89-99

Elsevier

Access to resources Recommend Favorite

Analysis of grain boundary dislocations by large angle convergent beam electron diffraction

By Morniroli J.P. Cherns D.

Ultramicroscopy, Vol. 62, Iss. 1, 1996-01 ,pp. : 53-63

Elsevier

Access to resources Recommend Favorite

Surface structural sensitivity of convergent-beam RHEED: Si (001) 2x1 models compared with dynamical simulations

By Zuo J.M. Weierstall U. Peng L.M. Spence J.C.H.

Ultramicroscopy, Vol. 81, Iss. 3, 2000-04 ,pp. : 235-244

Elsevier

Access to resources Recommend Favorite

Deconvolution of electron diffraction patterns of amorphous materials formed with convergent beam

By McBride W. Cockayne D.J.H. Tsuda K.

Ultramicroscopy, Vol. 94, Iss. 3, 2003-04 ,pp. : 305-308

Elsevier

Access to resources Recommend Favorite