Novel PZT Capacitor Technology for High Density FRAM Device with 0.18 μm D/R

Author： LEE K.   PARK K.   NAM S.   BAE B.   LIM J.   LEE M.   JOO S.   CHO S.   PARK S.   CHUNG U.   MOON J.  

Publisher： Taylor & Francis Ltd

ISSN： 0015-0193

Source： Ferroelectrics, Vol.303, Iss.1, 2004-01, pp. : 15-23

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