Polarization Switching and Defect Structure in Pure and MgO Doped Near-Stoichiometric LiNbO 3 Crystals

Author: Kumaragurubaran S.   Takekawa S.   Nakamura M.   Ganesamoorthy S.   Kitamura K.  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.326, Iss.1, 2005-01, pp. : 113-116

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Pure and MgO doped (up to 4 mol%) near-stoichiometric LiNbO 3 crystals are grown from Li rich (Li-55 mol%) melt. Significant improvement in the optical properties such as increase of optical damage resistance, accompanied by a shift in the –OH peak position in FTIR spectrum, and transparent range is observed at 1.75 mol% of MgO concentration in the crystal. Also the coercive field required for ferroelectric domain switching is minimum at 1.75 mol% MgO doping. Based on the results, the correlation between the defect structure and ferroelectric domain switching behavior in pure and MgO doped SLN is discussed.