Optical Properties of Electron Beam Evaporated Ge 2 Sb 2 Te 5 Thin Films for Rewritable High Density Data Storage Applications

Author: Ramanathaswamy P.   Jayakumar S.   Kannan M.  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.329, Iss.1, 2005-01, pp. : 119-124

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Abstract

Ge 2 Sb 2 Te 5 thin films were deposited by electron beam evaporation onto glass substrates at 303 K and 453 K substrate temperatures. The effect of film microstructure (modified by substrate temperature) on optical properties over the visible region was analyzed. It is observed that Ge 2 Sb 2 Te 5 thin films show good optical contrast in the lower wavelength region. Microstructural and spectral dependence on optical constants (n & k) of the films were studied. The optical band gap and the nature of transition of the Ge 2 Sb 2 Te 5 thin films also have been reported. Amorphous to crystalline microstructural phase change due to substrate temperature in these films was confirmed by X-ray diffraction and SEM analysis.