Author： Gupta Vinay Tomar Monika Sreenivas K.
Publisher： Taylor & Francis Ltd
ISSN： 0015-0193
Source： Ferroelectrics, Vol.329, Iss.1, 2005-01, pp. : 57-60
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Abstract
SAW propagation characteristics, velocity and temperature coefficient of delay (TCD) of a 128° Y-X LiNbO 3 SAW device integrated with an over-layer of rf magnetron sputtered SiO 2 film have been studied. A deviation in the experimental observations with respect to the theoretical calculations on the layered structure SiO 2 /LiNbO 3 are identified mainly due to the difference in the material parameters of the deposited SiO 2 film. Influence of deposition conditions on the materials parameters of SiO 2 thin film have been studied, and the representative values of density, dielectric constant, elastic constants (C 11 and C 44 and their temperature coefficients have been determined, required for the design of a temperature stable SAW device.
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