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Ferroelectrics, Vol. 385, Iss. 1, 2009-01 ,pp. : 39-45

Taylor & Francis Ltd

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Piezoelectric Properties of Bismuth Layer-Structured Ferroelectric SrBi₂Ta₂O₉-Bi₃TiTaO₉ Ceramics

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Comparing Crystallography and Ferroelectric Properties of a -Axis Oriented Bi 3.25 La 0.75 Ti 3 O 12 versus Non- c -Axis Oriented SrBi 2 Ta 2 O 9 Thin Films on Si(100)

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Ferroelectrics, Vol. 288, Iss. 1, 2003-01 ,pp. : 287-301

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Memory Properties of SrBi2Ta2O9 Ferroelectric Thin Film Prepared on SiO2/Si Substrate

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Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi_3.4Ce_0.6Ti₃O₁₂/CeO₂/Si structure

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Journal of Physics D: Applied Physics, Vol. 45, Iss. 2, 2012-01 ,pp. : 25102-25106

IOP Publishing

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