13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1 - x,Nbx)2O7 (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory

Author: Takahashi Ichirou  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.368, Iss.1, 2008-01, pp. : 90-95

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Abstract