Author: Diaz-Perez Monica
Publisher: Taylor & Francis Ltd
ISSN: 0038-7010
Source: Spectroscopy Letters, Vol.44, Iss.1, 2011-01, pp. : 17-21
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
By Solov’ev V. Sedova I. Lyublinskaya O. Semenov A. Mel’tser B. Sorokin S. Terent’ev Ya. Ivanov S.
Technical Physics Letters, Vol. 31, Iss. 3, 2005-03 ,pp. :
Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe/ III-V (GaAs, InP, GaSb)
Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. :
A T.E.M. in situ study of dislocation glide in InSb (III-V compound)
Revue de Physique Appliquée (Paris), Vol. 23, Iss. 4, 1988-04 ,pp. :