Low loss and high speed IGBT gate driver using the reverse current limiting technique of diode recovery for a hard switching inverter

Author： Jung Yong-Chae Cho Gyu-Hyeong

Publisher： Taylor & Francis Ltd

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.81, Iss.3, 1996-09, pp. : 321-336

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A 0.8 m BiCMOS Gate Driver for IGBT Power Switch

By Ramezani M.

Analog Integrated Circuits and Signal Processing, Vol. 24, Iss. 3, 2000-09 ,pp. : 175-185

Springer Publishing Company

Access to resources Recommend Favorite

High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

By Zhou Zhongfu Igic Petar

International Journal of Electronics, Vol. 97, Iss. 2, 2010-02 ,pp. : 195-205

Taylor & Francis Ltd

Access to resources Recommend Favorite

Practical evaluations of a ZVS-PFM quasi load-resonant high-frequency inverter using a new generation IGBT for an induction-heated cooking appliance

By Hirota Izuo Omori Hideki Nakaoka Mutsuo

International Journal of Electronics, Vol. 80, Iss. 2, 1996-02 ,pp. : 329-340

Taylor & Francis Ltd

Access to resources Recommend Favorite

A Wired-AND Current-Mode Logic Circuit Technique in CMOS for Low-Voltage, High-Speed and Mixed-Signal VLSIC

By Ungan I.E. Acskar M.

Analog Integrated Circuits and Signal Processing, Vol. 14, Iss. 1-2, 1997-09 ,pp. : 59-70

Springer Publishing Company

Access to resources Recommend Favorite

High-speed low-voltage CMOS line driver for SerDes applications

By Rogers M.

International Journal of Electronics, Vol. 100, Iss. 4, 2013-04 ,pp. : 575-581

Taylor & Francis Ltd

Access to resources Recommend Favorite