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Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. : 1043-1046

Springer Publishing Company

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Effects of high temperature annealing on the device characteristics of Ga 0.52 In 0.48 P/GaAs and Al 0.52 In 0.48 P/GaAs heterojunction bipolar transistors

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AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

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N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

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Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

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