A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.92, Iss.5, 2005-05, pp. : 295-302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study of avalanche breakdown (MI) mode in sub micron MOSFET device

By Singh A.K.

Microelectronics International, Vol. 22, Iss. 1, 2005-04 ,pp. : 16-20

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta I DDQ Testing

By Semenov O.

Journal of Electronic Testing, Vol. 19, Iss. 3, 2003-06 ,pp. : 341-352

Springer Publishing Company

Access to resources Recommend Favorite

Electro-thermal behaviour of a sub-micron silicon diode

By Muscato O Stefano V Di

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25021-25030

IOP Publishing

Access to resources Recommend Favorite

Edge potential effect on the operation of short-channel devices

By Singh A.K. Gurunarayanan S. Ramachandran V. Umashankar M.

Microelectronics International, Vol. 20, Iss. 3, 2003-12 ,pp. : 23-28

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

A Sub-Micron CMOS Programmable Charge Pump for Implantable Pacemaker

By Novo A. Gerosa A. Neviani A.

Analog Integrated Circuits and Signal Processing, Vol. 27, Iss. 3, 2001-05 ,pp. : 209-215

Springer Publishing Company

Access to resources Recommend Favorite