Novel 4H-SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage

Author： Zhang Yourun Zhang Bo Li Zhaoji Deng Xiaochuan Liu Xilin

Publisher： Emerald Group Publishing Ltd

ISSN： 0332-1649

Source： COMPEL: Int J for Computation and Maths. in Electrical and Electronic Eng., Vol.29, Iss.2, 2010-03, pp. : 515-521

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