Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

By Kruck P.   Weichselbaum A.   Helm M.   Fromherz T.   Bauer G.   Nutzel J.F.   Abstreiter G.  

Superlattices and Microstructures, Vol. 23, Iss. 1, 1998-01 ,pp. : 61-66

Academic Press

Access to resources Recommend Favorite

Stepwise dependence of the photoconductivity of Si/Ge structures with quantum dots on the interband illumination intensity

By Shegai O.   Markov V.   Nikiforov A.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 74-76

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments

By  

New Journal of Physics, Vol. 9, Iss. 5, 2007-05 ,pp. : 335-346

IOP Publishing

Access to resources Recommend Favorite

Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors

By Aleshkin V.   Antonov A.   Zholudev M.   Panevin V.   Vorob'ev L.   Firsov D.   Vasil'ev A.   Zhukov A.  

Physics of the Solid State, Vol. 53, Iss. 6, 2011-06 ,pp. : 1253-1262

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Analysis of the orientational effects on infrared absorption spectra in p-type semiconductor quantum wells

By Shechter G.   Shvartsman L.D.   Golub J.E.  

Superlattices and Microstructures, Vol. 19, Iss. 4, 1996-04 ,pp. : 383-392

Academic Press

Access to resources Recommend Favorite