Extremely flat interfaces in In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells grown on (411)A In 0.04 Ga 0.96 As substrates by MBE

Author： Hiyamizu S. Saeki T. Motokawa T. Shimomura S. Kitada T. Adachi A. Okamoto Y. Kusunoki T. Nakajima K. Sano N.

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.21, Iss.1, 1997-01, pp. : 107-111

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Spin splitting of conduction subbands in Al$_{0.3}$Ga$_{0.7}$As/GaAs/Al$_x$Ga$_{1-x}$ As/Al$_{0.3}$Ga$_{0.7}$As step quantum wells

EPL (EUROPHYSICS LETTERS), Vol. 85, Iss. 3, 2009-02 ,pp. : 37003-37003

Edp Sciences

Access to resources Recommend Favorite

Jonctions Ga0,96Al0,04Sb adaptées à la photodétection à 1,55 μm réalisées par épitaxie en phase liquide

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 8, 1987-08 ,pp. : 935-938

Edp Sciences

Access to resources Recommend Favorite

OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-163-C5-167

Edp Sciences

Access to resources Recommend Favorite

FORMATION AND PROPERTIES OF MBE GROWN AlSb-GaSb (100) INTERFACES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-77-C5-80

Edp Sciences

Access to resources Recommend Favorite

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

By Alekseev A. Aleksandrov S. Byrnaz A. Velikovski L. Velikovski I. Veretekha A. Krasovitski D. Pavlenko M. Petrov S. Pogorel’ski M. Pogorel’ski Yu. Sokolov I. Sokolov M. Stepanov M. Tkachenko A. Shkurko A. Chaly V.

Technical Physics Letters, Vol. 32, Iss. 11, 2006-11 ,pp. : 960-963

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite