Author： Ryu S.R. Herold G. Kono J. Salib M. McCombe B.D. Kaminski J. Allen Jr S.J.
Publisher： Academic Press
ISSN： 0749-6036
Source： Superlattices and Microstructures, Vol.21, Iss.2, 1997-02, pp. : 241-246
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Abstract
Saturation of the D 0 1s-2p^ + transition, the D - -singlet transition and CR has been studied in donor (Si)-doped GaAs/AlGaAs multiple-quantum-well samples by magneto-transmission and magneto-photoconductivity measurements with the UCSB free electron laser. Effective lifetimes of the D 0 1s-2p + transition were found to vary systematically with laser frequency, decreasing from 62 ns at 84~cm -1 to 3 ns at 124 cm -1 . The absorption coefficient of the D - -singlet transition initially increased by up to 40% and showed complete quenching at higher laser powers.
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