Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

Author： Brubach J.   Silov A.Y.   Haverkort J.E.M.   van der Vleuten W.   Wolter J.H.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.21, Iss.4, 1997-04, pp. : 527-532

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Quantum dots in InAs layers of subcritical thickness on GaAs(100)

By Tonkikh A.   Cirlin G.   Dubrovskii V.   Samsonenko Yu.   Polyakov N.   Egorov V.   Gladyshev A.   Kryzhanovskaya N.   Ustinov V.  

Technical Physics Letters, Vol. 29, Iss. 8, 2003-08 ,pp. : 691-693

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Band offsets in In0.15 Ga0.85 As GaAs and In0.15 Ga0.85 AsAl0.15 Ga0.85 As studied by photoluminescence and cathodoluminescence

By Goldys E.M.   Zuo H.Y.   Tansley T.L.   Phillips M.R.   Contessa C.M.  

Superlattices and Microstructures, Vol. 23, Iss. 6, 1998-06 ,pp. : 1223-1226

Academic Press

Access to resources Recommend Favorite

Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A †

By Ito Tomonori   Akiyama Toru   Nakamura Kohji  

Condensed Matter, Vol. 1, Iss. 1, 2016-11 ,pp. : 4-4

MDPI

Access to resources Recommend Favorite

InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates

By Jeppesen S.   Miller M.S.   Kowalski B.   Maximov I.   Samuelson L.  

Superlattices and Microstructures, Vol. 23, Iss. 6, 1998-06 ,pp. : 1347-1352

Academic Press

Access to resources Recommend Favorite

Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems

By Ekpunobi A.J.   Animalu A.O.E.  

Superlattices and Microstructures, Vol. 31, Iss. 5, 2002-05 ,pp. : 247-252

Academic Press

Access to resources Recommend Favorite