Evidence for a metal-insulator transition at B = 0 in Si/SiGe/Si quantum wells

Author： D'iorio M.   Brown D.   Lam J.   Stewart D.   deblois S.   Lafontaine H.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.23, Iss.1, 1998-01, pp. : 55-59

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electronic disorder of P- and B-doped Si at the metal–insulator transition investigated by scanning tunnelling microscopy and electronic transport

By  

New Journal of Physics, Vol. 15, Iss. 5, 2013-05 ,pp. : 967-983

IOP Publishing

Access to resources Recommend Favorite

Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities

By Poklonski N.   Vyrko S.   Zabrodskii A.  

Physics of the Solid State, Vol. 46, Iss. 6, 2004-06 ,pp. : 1101-1106

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Conductivity maximum at low temperatures in metallic Si:P nearthe metal-insulator transition

By Blaschette A.   Ruzzu A.   Wagner S.   H. v. Löhneysen A.  

EPL (EUROPHYSICS LETTERS), Vol. 36, Iss. 7, 2010-03 ,pp. : 527-532

Edp Sciences

Access to resources Recommend Favorite

Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

By  

New Journal of Physics, Vol. 13, Iss. 1, 2011-01 ,pp. : 137-154

IOP Publishing

Access to resources Recommend Favorite

Lateral transport in boron doped SiGe quantum wells

By Kagan M.S.   Altukhov I.V.   Korolev K.A.   Orlov D.V.   Sinis V.P.   Thomas S.G.   Wang K.L.   Schmalz K.   Yassievich I.N.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 203-206

Academic Press

Access to resources Recommend Favorite