Gate-voltage-induced realization of different rational fractions of h/e2 at fixed values of current and magnetic field

Author: Blocker M.   Nachtwei G.   Ahlers F.-.J.   Bliek L.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.23, Iss.1, 1998-01, pp. : 77-81

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Abstract