Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using In x Ga 1 - x As quantum well and InAs-GaAs superlattice channels

Author: Cury L.A.   Matinaga F.M.   Freire S.L.S.   Moreira M.V.B.   Beerens J.   Py M.A.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.23, Iss.5, 1998-05, pp. : 1019-1025

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Abstract