Schottky barrier at the AlSi(111) doped and double-doped interfaces: a local-density cluster study

Author： Zavodinsky V.G.   Kuyanov I.A.  

Publisher： Academic Press

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.24, Iss.1, 1998-07, pp. : 55-60

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Local-density approximation study of p -Si/ n -Si nanoscale junctions

By Zavodinsky V.G.   Kuyanov I.A.  

Superlattices and Microstructures, Vol. 20, Iss. 2, 1995-02 ,pp. : 187-192

Academic Press

Access to resources Recommend Favorite

ELECTRON SPECTROSCOPY STUDY OF Mo/Si(111) INTERFACES

By  

Le Journal de Physique Colloques, Vol. 45, Iss. C5, 1984-04 ,pp. : C5-435-C5-439

Edp Sciences

Access to resources Recommend Favorite

Effect of compensation on recombination into Si doped (Ga, Al)As

By  

Revue de Physique Appliquée (Paris), Vol. 15, Iss. 4, 1980-04 ,pp. : 861-864

Edp Sciences

Access to resources Recommend Favorite

B/N pair and Si doped ultra-small-diameter single-walled carbon nanotubes: a density functional theory study

By Huang Gang   Wang Yue   Shao QingYi  

Physica Scripta, Vol. 89, Iss. 11, 2014-11 ,pp. : 115807-115811

IOP Publishing

Access to resources Recommend Favorite

ELECTRICAL PROPERTIES AND MICROSTRUCTURE OF INTERNAL INTERFACES IN Al DOPED POLYSILICON

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. : C4-405-C4-410

Edp Sciences

Access to resources Recommend Favorite