Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well

Author： Triques A.L.C. Iikawa F. Brum J.A. Maialle M.Z. Pereira R.G. Borghs G.

ISSN： 0749-6036

Source： Superlattices and Microstructures, Vol.25, Iss.3, 1999-03, pp. : 551-554

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Stokes shift in one-side modulation-n-doped-strained Ga_xIn_{1 - x}As/InP asymmetric quantum well

By Fanyao Q. Fonseca A.L.A. Nunes O.A.C.

Superlattices and Microstructures, Vol. 26, Iss. 6, 1999-12 ,pp. : 377-394

Academic Press

Access to resources Recommend Favorite

Doping profile effects on modulation-doped single nonabrupt GaAs/Al_xGa_{1 - x}As quantum wells

By Wang H. Farias G.A. Freire V.N.

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 307-311

Academic Press

Access to resources Recommend Favorite

Resonance capture of holes in modulation-doped n-AlGaAs/GaAs quantum well structures

By Yaremenko N. Karachevtseva M. Strakhov V.

Doklady Physics, Vol. 56, Iss. 3, 2011-03 ,pp. : 150-154

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Exciton binding energies in GaN/Al_xGa_{1 - x}N pseudomorphic quantum wells

By Jeon J. Sanders G.D. Kim K.W. Littlejohn M.A.

Superlattices and Microstructures, Vol. 27, Iss. 1, 2000-01 ,pp. : 53-58

Academic Press

Access to resources Recommend Favorite

PHOTOLUMINESCENCE STUDIES OF n-TYPE MODULATION DOPED AlGaAs-GaAs MULTIPLE QUANTUM WELLS IN TILTED MAGNETIC FIELDS

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-413-C5-417

Edp Sciences

Access to resources Recommend Favorite