Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

Author: Wang W-C.   Pan H-J.   Yu K-H.   Lin K-W.   Tsai J-H.   Cheng S-Y.   Liu W-C.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.29, Iss.2, 2001-02, pp. : 133-145

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract