Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1 - xAs quantum well-wires

Author: Aktaş S.   Okan S.E.   Akbaş H.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.30, Iss.3, 2001-09, pp. : 129-134

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Abstract

The ground state binding energy of a hydrogenic impurity in a coaxial cylindirical quantum well wire system subjected to an external electric field applied perpendicular to the symmetry axis of the wire system is studied within a variational scheme. Binding energy calculations were performed as functions of the inner barrier thickness and the electric field for two different impurity positions. The main result is that a sharp decrease in the binding energy, which may be important in device applications, occurs in certain conditions.

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