Processing of 'Wide Band Gap Semiconductors

Author: Pearton   Stephen J.  

Publisher: Elsevier Science‎

Publication year: 2000

E-ISBN: 9780815518778

P-ISBN(Paperback): 9780815514398

P-ISBN(Hardback):  9780815514398

Subject: TN30 general problems

Language: ENG

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Description

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Chapter

Front Cover

pp.:  1 – 4

Copyright Page

pp.:  5 – 14

Contents

pp.:  14 – 22

Chapter 2. Epitaxial Growth of II-VI Compounds by MOVPE

pp.:  63 – 101

Chapter 3. Ohmic Contacts to II-VI and III-V Compound Semiconductors

pp.:  101 – 172

Chapter 4. Dry Etching of SiC

pp.:  172 – 199

Chapter 5. Processing of Silicon Carbide for Devices and Circuits

pp.:  199 – 271

Chapter 6. Plasma Etching of III-V Nitrides

pp.:  271 – 321

Chapter 7. Ion Implantation in Wide Bandgap Semiconductors

pp.:  321 – 375

Chapter 8. Rare Earth Impurities in Wide Gap Semiconductors

pp.:  375 – 414

Chapter 9. SIMS Analysis of Wide Bandgap Semiconductors

pp.:  414 – 450

Chapter 10. Hydrogen in Wide Bandgap Semiconductors

pp.:  450 – 527

Chapter 11. Diamond Deposition and Characterization

pp.:  527 – 564

Index

pp.:  564 – 594

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