Nonradiative Recombination in Semiconductors ( Volume 33 )

Publication series ：Volume 33

Author： Abakumov V. N.;Perel V. I.;Yassievich I. N.

Publisher： Elsevier Science‎

Publication year： 1991

E-ISBN: 9780444600820

P-ISBN(Paperback): 9780444888549

P-ISBN(Hardback): 9780444888549

Subject： O47 semiconductor physics

Language： ENG

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Description

In recent years, great progress has been made in the understanding
of recombination processes controlling the number of excess
free carriers in semiconductors under nonequilibrium conditions.
As a result, it is now possible to give a comprehensive
theoretical description of these processes. The authors have
selected a number of experimental results which elucidate the
underlying physical problems and enable a test of theoretical
models.

The following topics are dealt with: phenomenological theory of
recombination, theoretical models of shallow and deep localized
states, cascade model of carrier capture by impurity centers,
capture restricted by diffusion, multiphonon processes, Auger
processes, effect of electric field on capture and thermal
emission of carriers.

Chapter

Front Cover

pp.： 1 – 4

Nonradiative Recombination in Semiconductors

pp.： 4 – 5

pp.： 5 – 14

Preface to the series

pp.： 10 – 12

Preface

pp.： 12 – 18

Table of Contents

pp.： 14 – 10

Introduction

pp.： 18 – 27

Chapter 1. Phenomenological theory of recombination

pp.： 27 – 58

Chapter 2. Impurity centers

pp.： 58 – 79

Chapter 3. Cascade capture by isolated attractive centers

pp.： 79 – 95

Chapter 4. One-quantum transitions

pp.： 95 – 105

Chapter 5. Experimental data on capture by attractive centers in Ge and Si

pp.： 105 – 115

Chapter 6. Reciprocal influence of impurity centers

pp.： 115 – 125

Chapter 7. Capture limited by diffusion

pp.： 125 – 131

Chapter 8. Capture by repulsive centers

pp.： 131 – 137

Chapter 9. Multiphonon capture and thermal emission

pp.： 137 – 189

Chapter 10. Thermal emission and capture in an electric field

pp.： 189 – 206

Chapter 11. Auger recombination

pp.： 206 – 244

Chapter 12. Impurity Auger processes

pp.： 244 – 256

Appendix A: kP-method and Kane model

pp.： 256 – 267

Appendix B: Valence band structure of cubic semiconductors: the Luttinger Hamiltonian

pp.： 267 – 271

Appendix C: Electron–acoustic-phonon interaction

pp.： 271 – 276

Appendix D: Free carrier scattering by acoustic phonons

pp.： 276 – 280

Appendix E: Acoustic-phonon assisted transitions between hydrogenlike center levels

pp.： 280 – 284

Appendix F: Quasi-classical density of states

pp.： 284 – 289

Appendix G: Fokker–Planck equation in total energy space

pp.： 289 – 294

Appendix H: Equation of spatial and energy diffusion

pp.： 294 – 297

Appendix I: Amplitude of scattering of carriers by attractive impurity centers in the model of zero-radius potential

pp.： 297 – 300

References

pp.： 300 – 312

Author index

pp.： 312 – 320

Subject index

pp.： 320 – 322

Materials index

pp.： 322 – 324

Cumulative index

pp.： 324 – 338

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